High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate

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Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

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Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

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