@conference {shi2022high,
	title = {High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate},
	booktitle = {2022 International Electron Devices Meeting (IEDM)},
	year = {2022},
	pages = {7{\textendash}1},
	publisher = {IEEE},
	organization = {IEEE},
	author = {Shi, Xinhang and Xin Wang and Liu, Shiyuan and Guo, Qi and Lei Sun and Li, Xuefei and Ru HUANG and Wu, Yanqing}
}
