最新科研成果
- Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOX as Gate Dielectric
- Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures
- High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition