Wang M, Zhan D, Wang X, Hu Q, Gu C, Li X, Wu Y.
Performance optimization of atomic layer deposited ZnO thin-film transistors by vacuum annealing. IEEE Electron Device Letters. 2021;42:716–719.
Gao Q, Zhang C, Yi Z, Pan X, Chi F, Liu L, Li X, Wu Y.
Improved low-frequency noise in CVD bilayer MoS2 field-effect transistors. Applied Physics Letters. 2021;118:153103.