Citation:Wang M, Zhan D, Wang X, Hu Q, Gu C, Li X, Wu Y. Performance optimization of atomic layer deposited ZnO thin-film transistors by vacuum annealing. IEEE Electron Device Letters. 2021;42:716–719.ExportBibTex EndNote Tagged EndNote XML
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Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.
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