@article {RN75,
	title = {Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique},
	journal = {Applied Physics Letters},
	volume = {93},
	number = {24},
	year = {2008},
	type = {Journal Article},
	issn = {0003-6951},
	doi = {10.1063/1.3050466},
	url = {\&lt;Go to ISI\&gt;://WOS:000261896400035},
	author = {Wu, Y. Q. and Xu, M. and Ye, P. D. and Cheng, Z. and J. Li and Park, J. S. and Hydrick, J. and Bai, J. and Carroll, M. and Fiorenza, J. G. and Lochtefeld, A.}
}
