Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics

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Xu M, Wu YQ, Koybasi O, Shen T, Ye PD. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics. Applied Physics Letters [Internet]. 2009;94.

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