High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum G(m) exceeding 1.1 mS/mu m: New HBr Pretreatment and Channel Engineering

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Wu YQ, Xu M, Wang RS, Koybasi O, Ye PD, Ieee. High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum G(m) exceeding 1.1 mS/mu m: New HBr Pretreatment and Channel Engineering.; 2009 pp. 296-299.

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