@book {RN71,
	title = {High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum G(m) exceeding 1.1 mS/mu m: New HBr Pretreatment and Channel Engineering},
	series = {2009 Ieee International Electron Devices Meeting},
	year = {2009},
	pages = {296-299},
	type = {Book},
	isbn = {978-1-4244-5639-0},
	url = {\&lt;Go to ISI\&gt;://WOS:000279343900074},
	author = {Wu, Y. Q. and Xu, M. and Wang, R. S. and Koybasi, O. and Ye, P. D. and Ieee}
}
