Wu Y, Perebeinos V, Lin Y-M, Low T, Xia F, Avouris P. Quantum Behavior of Graphene Transistors near the Scaling Limit. Nano Letters [Internet]. 2012;12:1417-1423. 访问链接 SCI被引用次数：46.

Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, et al. State-of-the-Art Graphene High-Frequency Electronics. Nano Letters [Internet]. 2012;12:3062-3067. 访问链接 SCI被引用次数：310.

Wu Y, Farmer DB, Zhu W, Han S-J, Dimitrakopoulos CD, Bol AA, Avouris P, Lin Y-M. Three-Terminal Graphene Negative Differential Resistance Devices. Acs Nano [Internet]. 2012;6:2610-2616. 访问链接 SCI被引用次数：125.

Wrachien N, Cester A, Bari D, Zanoni E, Meneghesso G, Wu YQ, Ye PD. Effects of channel hot carrier stress on III-V bulk planar MOSFETs.; 2012 pp. 3D.4.1-7. 访问链接

Wrachien N, Cester A, Bari D, Zanoni E, Meneghesso G, Wu YQ, Ye PD, Ieee. Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs.; 2012. 访问链接

Steiner M, Engel M, Lin Y-M, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo J-WT, Green AA, et al. High-frequency performance of scaled carbon nanotube array field-effect transistors. Applied Physics Letters [Internet]. 2012;101. 访问链接 SCI被引用次数：75.

Liu G, Wu Y, Lin Y-M, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, et al. Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography. Acs Nano [Internet]. 2012;6:6786-6792. 访问链接 SCI被引用次数：56.

Wu Y, Lin Y-M, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature [Internet]. 2011;472:74-78. 访问链接 SCI被引用次数：694.

Xia F, Perebeinos V, Lin Y-M, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology [Internet]. 2011;6:179-184. 访问链接 SCI被引用次数：604.

Wrachien N, Cester A, Wu YQ, Ye PD, Zanoni E, Meneghesso G. Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric. Ieee Electron Device Letters [Internet]. 2011;32:488-490. 访问链接 SCI被引用次数：18.

Wu YQ, Farmer DB, Valdes-Garcia A, Zhu WJ, Jenkins KA, Dimitrakopoulos C, Avouris P, Lin YM, Ieee. Record High RF Performance for Epitaxial Graphene Transistors.; 2011. 访问链接

Wu YQ, Farmer DB, Valdes-Garcia A, Zhu WJ, Jenkins KA, Dimitrakopoulos C, Avouris P, Lin YM. Record high RF performance for epitaxial graphene transistors.; 2011 pp. 23.8 (3 pp.)-23.8 (3 pp.). 访问链接

Lin Y-M, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy, Charles R. J, Gaskill KD, Dimitrakopoulos C, Avouris P. Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology. Ieee Electron Device Letters [Internet]. 2011;32:1343-1345. 访问链接 SCI被引用次数：70.

Lin Y-M, Valdes-Garcia A, Han S-J, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, et al. Wafer-Scale Graphene Integrated Circuit. Science [Internet]. 2011;332:1294-1297. 访问链接 SCI被引用次数：675.

Gu JJ, Wu YQ, Ye PD. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors. Journal of Applied Physics [Internet]. 2011;109. 访问链接 SCI被引用次数：19.

Gu JJ, Liu YQ, Wu YQ, Colby R, Gordon RG, Ye PD. First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach.; 2011 pp. 33.2 (4 pp.)-33.2 (4 pp.). 访问链接

Gu JJ, Liu YQ, Wu YQ, Colby R, Gordon RG, Ye PD, Ieee. First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach.; 2011. 访问链接

Gu JJ, Koybasi O, Wu YQ, Ye PD. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation. Applied Physics Letters [Internet]. 2011;99. 访问链接 SCI被引用次数：30.

Ye PD, Gu JJ, Wu YQ, Xu M, Xuan Y, Shen T, Neal AT. ALD High-k as a Common Gate Stack Solution for Nano-electronics. In: Misra D, Chen Z, Iwai H, Bauza D, Chikyow T, Obeng Y Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. Vol. 28. ; 2010. pp. 51-+. 访问链接 SCI被引用次数：5.

Wu Y, Ye PD. Scaling of InGaAs MOSFETs into deep-submicron. In: Srinivasan P, Obeng Y, Misra D, Karim Z, DeGendt S Graphene, Ge/Iii-V, and Emerging Materials for Post-Cmos Applications 2. Vol. 28. ; 2010. pp. 185-201. 访问链接 SCI被引用次数：1.