Wafer-Scale Graphene Integrated Circuit

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Lin Y-M, Valdes-Garcia A, Han S-J, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, et al. Wafer-Scale Graphene Integrated Circuit. Science [Internet]. 2011;332:1294-1297.

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Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

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Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

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Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

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Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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吴燕庆（Yanqing Wu）

北京大学集成电路学院

Wafer-Scale Graphene Integrated Circuit

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