科研成果

2019

Li T, Li X, Tian M, Hu Q, Wang X, Li S, Wu Y. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures. Nanoscale [Internet]. 2019;11:4701-4706. 访问链接 SCI被引用次数：7.

Wang M, Li X, Xiong X, Song J, Gu C, Zhan D, Hu Q, Li S, Wu Y. High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition. IEEE Electron Device Letters. 2019;40:419-422. SCI被引用次数：20.

Tian M, Li X, Gao Q, Xiong X, Zhang Z, Wu Y. Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene. IEEE Electron Device Letters. 2019;40:325-328. SCI被引用次数：5.

2018

Zhang Z, Xu X, Song J, Gao Q, Li S, Hu Q, Li X, Wu Y. High-performance transistors based on monolayer CVD MoS2 grown on molten glass. Applied Physics Letters [Internet]. 2018;113. 访问链接 SCI被引用次数：16.

Zemlyanov D, Luo W, Milligan C, Du Y, Yang L, Wu Y, Ye P. Oxidative environment derived surface study on black phosphorus. Abstracts of Papers of the American Chemical Society [Internet]. 2018;256. 访问链接

Xiong X, Li X, Huang M, Li T, Gao T, Wu Y. High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric. Ieee Electron Device Letters [Internet]. 2018;39:127-130. 访问链接 SCI被引用次数：22.

Tian M, Li X, Li T, Gao Q, Xiong X, Hu Q, Wang M, Wang X, Wu Y. High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies. Acs Applied Materials & Interfaces [Internet]. 2018;10:20219-20224. 访问链接 SCI被引用次数：10.

Tian M, Xiong X, Huang M, Li T, Li S, Hu Q, Li X, Wu Y. High-performance two-dimensional transistors and circuits.; 2018 pp. 565-568. 访问链接

Li X, Grassi R, Li S, Li T, Xiong X, Low T, Wu Y. Anomalous Temperature Dependence in Metal-Black Phosphorus Contact. Nano Letters [Internet]. 2018;18:26-31. 访问链接 SCI被引用次数：16.

Li X, Xiong X, Li T, Gao T, Wu Y. Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics. Ieee Electron Device Letters [Internet]. 2018;39:1952-1955. 访问链接 SCI被引用次数：2.

Li X, Li T, Zhang Z, Xiong X, Li S, Wu Y. Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors. Ieee Electron Device Letters [Internet]. 2018;39:131-134. 访问链接 SCI被引用次数：6.

Li T, Tian M, Li S, Huang M, Xiong X, Hu Q, Li S, Li X, Wu Y. Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures. Advanced Electronic Materials [Internet]. 2018;4. 访问链接 SCI被引用次数：11.

Hu Q, Li S, Li T, Wang X, Li X, Wu Y. Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-kappa Dielectric. Ieee Electron Device Letters [Internet]. 2018;39:1377-1380. 访问链接 SCI被引用次数：18.

Gao T, Li X, Xiong X, Huang M, Li T, Wu Y. Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors. Ieee Electron Device Letters [Internet]. 2018;39:769-772. 访问链接 SCI被引用次数：15.

Gao Q, Zhang Z, Xu X, Song J, Li X, Wu Y. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications [Internet]. 2018;9. 访问链接 SCI被引用次数：29.

2017

Song H, Li T, Zhang J, Zhou Y, Luo J, Chen C, Yang B, Ge C, Wu Y, Tang J. Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure. Advanced Materials [Internet]. 2017;29. 访问链接 SCI被引用次数：80.

Li X, Xiong X, Li T, Li S, Zhang Z, Wu Y. Effect of Dielectric Interface on the Performance of MoS2 Transistors. Acs Applied Materials & Interfaces [Internet]. 2017;9:44602-44608. 访问链接 SCI被引用次数：22.

Li T, Zhang Z, Li X, Huang M, Li S, Li S, Wu Y. High field transport of high performance black phosphorus transistors. Applied Physics Letters [Internet]. 2017;110. 访问链接 SCI被引用次数：22.

Li X, Xiong X, Wu Y. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices. Chinese Physics B [Internet]. 2017;26. 访问链接 SCI被引用次数：4.

Huang M, Xiong X, Li T, Wu Y. High performance transistors based on two dimensional materials. In: Qin YJ, Hong ZL, Tang TA 2017 Ieee 12th International Conference on Asic. ; 2017. pp. 1053-1056. 访问链接

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成果概览

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最新科研成果

已提交.

Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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