科研成果 by Year: 2008

2008
Ye PD, Xuan Y, Wu YQ, Shen T, Pal H, Varghese D, Alam MA, Lundstrom MS, Wang WK, Hwang JCM, et al. Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric.; 2008 pp. 93-4. 访问链接
Xuan Y, Shen T, Xu A, Wu YQ, Ye PD, Ieee. High-performance Surface Channel In-rich In0.75Ga0.25As MOSFETs with ALD High-k as Gate Dielectric. In: Ieee International Electron Devices Meeting 2008, Technical Digest. ; 2008. pp. 371-+. 访问链接
Xuan Y, Shen T, Xu M, Wu YQ, Ye PD. High-performance surface channel In-rich In0.75Ga0.25As MOSFETs with ALD high-k as gate dielectric.; 2008 pp. 4 pp.-4 pp. 访问链接
Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics. Applied Physics Letters [Internet]. 2008;92. 访问链接
Xuan Y, Wu YQ, Ye PD. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm. Ieee Electron Device Letters [Internet]. 2008;29:294-296. 访问链接
Xuan Y, Shen T, Wu YQ, Xu M, Ye PD. High-performance inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as gate dielectric.; 2008 pp. 37-8. 访问链接
Wu YQ, Xu M, Xuan Y, Ye PD, Li J, Cheng Z, Lochtefeld A, Ieee. INVERSION-TYPE ENHANCEMENT-MODE INP MOSFETs WITH ALD HIGH-K AL(2)O(3) AND HFO2 AS GATE DIELECTRICS. In: 2008 17th Biennial University/Government/Industry Micro-Nano Symposium, Proceedings. ; 2008. pp. 49-+. 访问链接
Wu YQ, Xu M, Ye PD, Cheng Z, Li J, Park JS, Hydrick J, Bai J, Carroll M, Fiorenza JG, et al. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters [Internet]. 2008;93. 访问链接
Wu YQ, Ye PD, Capano MA, Xuan Y, Sui Y, Qi M, Cooper JA, Shen T, Pandey D, Prakash G, et al. Top-gated graphene field-effect-transistors formed by decomposition of SiC. Applied Physics Letters [Internet]. 2008;92. 访问链接
Varghese D, Xuan Y, Wu YQ, Shen T, Ye PD, Alam MA. Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET.; 2008 pp. 4 pp.-4 pp. 访问链接
Varghese D, Xuan Y, Wu YQ, Shen T, Ye PD, Alam MA, Ieee. Multi-probe Interface Characterization of In0.65Ga0.35As/Al2O3 MOSFET. Ieee International Electron Devices Meeting 2008, Technical Digest [Internet]. 2008:379-382. 访问链接
Shen T, Wu YQ, Capano MA, Rokhinson LP, Engel LW, Ye PD. Magnetoconductance oscillations in graphene antidot arrays. Applied Physics Letters [Internet]. 2008;93. 访问链接