INVERSION-TYPE ENHANCEMENT-MODE INP MOSFETs WITH ALD HIGH-K AL(2)O(3) AND HFO2 AS GATE DIELECTRICS

Citation:

Wu YQ, Xu M, Xuan Y, Ye PD, Li J, Cheng Z, Lochtefeld A, Ieee. INVERSION-TYPE ENHANCEMENT-MODE INP MOSFETs WITH ALD HIGH-K AL(2)O(3) AND HFO2 AS GATE DIELECTRICS. In: 2008 17th Biennial University/Government/Industry Micro-Nano Symposium, Proceedings. ; 2008. pp. 49-+.

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