INVERSION-TYPE ENHANCEMENT-MODE INP MOSFETs WITH ALD HIGH-K AL(2)O(3) AND HFO2 AS GATE DIELECTRICS - Wu, Y. Q.; Xu, M.; Xuan, Y.; Ye, P. D.; J. Li; Cheng, Z.; Lochtefeld, A.; Ieee (2008 17th Biennial University/Government/Industry Micro-Nano Symposium, Proceedings, 2008)