<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>5</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wu, Y. Q.</style></author><author><style face="normal" font="default" size="100%">Xu, M.</style></author><author><style face="normal" font="default" size="100%">Xuan, Y.</style></author><author><style face="normal" font="default" size="100%">Ye, P. D.</style></author><author><style face="normal" font="default" size="100%">J. Li</style></author><author><style face="normal" font="default" size="100%">Cheng, Z.</style></author><author><style face="normal" font="default" size="100%">Lochtefeld, A.</style></author><author><style face="normal" font="default" size="100%">Ieee</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">INVERSION-TYPE ENHANCEMENT-MODE INP MOSFETs WITH ALD HIGH-K AL(2)O(3) AND HFO2 AS GATE DIELECTRICS</style></title><secondary-title><style face="normal" font="default" size="100%">2008 17th Biennial University/Government/Industry Micro-Nano Symposium, Proceedings</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">University Government Industry Micro-Nano Symposium Proceedings</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&amp;lt;Go to ISI&amp;gt;://WOS:000260372400013</style></url></web-urls></urls><pages><style face="normal" font="default" size="100%">49-+</style></pages><isbn><style face="normal" font="default" size="100%">978-1-4244-2484-9</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><work-type><style face="normal" font="default" size="100%">Book Section</style></work-type><custom7><style face="normal" font="default" size="100%">000260372400013</style></custom7></record></records></xml>