Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric

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Ye PD, Xuan Y, Wu YQ, Shen T, Pal H, Varghese D, Alam MA, Lundstrom MS, Wang WK, Hwang JCM, et al. Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric.; 2008 pp. 93-4.

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