Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric - Ye, P. D.; Xuan, Y.; Wu, Y. Q.; Shen, T.; Pal, H.; Varghese, D.; Alam, M. A.; Lundstrom, M. S.; Wang, W. K.; Hwang, J. C. M.; Antoniadis, D. A. (2008 66th Annual Device Research Conference, 2008)