@book {RN82,
	title = {Subthreshold characteristics of high-performance inversion-type enhancement-mode InGaAs NMOSFETs with ALD Al2O3 as gate dielectric},
	series = {2008 66th Annual Device Research Conference},
	year = {2008},
	pages = {93-4},
	type = {Book},
	isbn = {978-1-4244-1942-5},
	doi = {10.1109/drc.2008.4800750},
	url = {\&lt;Go to ISI\&gt;://INSPEC:10518644},
	author = {Ye, P. D. and Xuan, Y. and Wu, Y. Q. and Shen, T. and Pal, H. and Varghese, D. and Alam, M. A. and Lundstrom, M. S. and Wang, W. K. and Hwang, J. C. M. and Antoniadis, D. A.}
}
