科研成果 by Year: 2007

2007

Xuan Y, Wu YQ, Lin HC, Shen T, Ye PD. Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric. Ieee Electron Device Letters [Internet]. 2007;28:935-938. 访问链接

Xuan Y, Wu YQ, Shen T, Yang T, Ye PD, Ieee. High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al(2)O(3), HfO(2), and HfAlO as gate dielectrics.; 2007 pp. 637-640. 访问链接

Yang T, Xuan Y, Zemlyanov D, Shen T, Wu YQ, Woodall JM, Ye PD, Aguirre-Tostado FS, Milojevic M, McDonnell S, et al. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric. Applied Physics Letters [Internet]. 2007;91. 访问链接

Xuan Y, Wu YQ, Lin HC, Shen T, Ye PD. High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm.; 2007 pp. 207-8. 访问链接

Wu Y, Ye PD, Capano MA, Shen T, Xuan Y, Sui Y, Qi M, Cooper, James A. J, Ieee. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm(2)/Vs and hole mobility exceeding 3400 cm(2)/Vs.; 2007 pp. 554-+. 访问链接

Wu YQ, Xuan Y, Shen T, Ye PD, Cheng Z, Lochtefeld A. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters [Internet]. 2007;91. 访问链接

Wu YQ, Xuan Y, Ye PD, Cheng Z, Lochtefeld A. Inversion-type enhancement-mode InP MOSFETs with ALD AI2O3, HfO2 and HfAlO nanolaminates as high-k gate dielectrics.; 2007 pp. 117-18. 访问链接

Wu YQ, Lin HC, Ye PD, Wilk GD. Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs. Applied Physics Letters [Internet]. 2007;90. 访问链接

Wu YQ, Shen T, Ye PD, Wilk GD. Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures. Applied Physics Letters [Internet]. 2007;90. 访问链接

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Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

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