Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric

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Yang T, Xuan Y, Zemlyanov D, Shen T, Wu YQ, Woodall JM, Ye PD, Aguirre-Tostado FS, Milojevic M, McDonnell S, et al. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric. Applied Physics Letters [Internet]. 2007;91.

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