@article {RN88,
	title = {Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric},
	journal = {Applied Physics Letters},
	volume = {91},
	number = {14},
	year = {2007},
	type = {Journal Article},
	issn = {0003-6951},
	doi = {10.1063/1.2798499},
	url = {\&lt;Go to ISI\&gt;://WOS:000249974100068},
	author = {Yang, T. and Xuan, Y. and Zemlyanov, D. and Shen, T. and Wu, Y. Q. and Woodall, J. M. and Ye, P. D. and Aguirre-Tostado, F. S. and Milojevic, M. and McDonnell, S. and Wallace, R. M.}
}
