Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

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Wu YQ, Xuan Y, Shen T, Ye PD, Cheng Z, Lochtefeld A. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters [Internet]. 2007;91.

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