@article {RN89,
	title = {Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics},
	journal = {Applied Physics Letters},
	volume = {91},
	number = {2},
	year = {2007},
	type = {Journal Article},
	issn = {0003-6951},
	doi = {10.1063/1.2756106},
	url = {\&lt;Go to ISI\&gt;://WOS:000248017300039},
	author = {Wu, Y. Q. and Xuan, Y. and Shen, T. and Ye, P. D. and Cheng, Z. and Lochtefeld, A.}
}
