New Insight into Fermi-Level Unpinning on GaAs: Impact of Different Surface Orientations

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Xu M, Xu K, Contreras R, Milojevic M, Shen T, Koybasi O, Wu YQ, Wallace RM, Ye PD, Ieee. New Insight into Fermi-Level Unpinning on GaAs: Impact of Different Surface Orientations.; 2009 pp. 809-+.

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Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

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