Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics

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Ye PD, Xuan Y, Wu YQ, Xu M. Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics. In: Sah RE, Deen JM, Toriumi A, Zhang J, Yota J Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. Vol. 19. ; 2009. pp. 605-+.

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