Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

Citation:

Nuo M, Zhong M, Fan Z, Lao Y, Liu L, Wang M, Wei J. Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT. IEEE Transactions on Electron Devices. 2025;72:1021-1026.