@article {10870261,
	title = {Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT},
	journal = {IEEE Transactions on Electron Devices},
	volume = {72},
	number = {3},
	year = {2025},
	pages = {1021-1026},
	keywords = {Floating p-GaN layer, gate-/drain-coupled barrier lowering (GDCBL), HEMTs, Junctions, Logic gates, Rectifiers, Schottky-type p-GaN gate HEMT, Silicon, stress, Stress measurement, Switches, Testing, Threshold voltage, Vₜₕ shift},
	doi = {10.1109/TED.2025.3534155},
	author = {Nuo, Muqin and Zhong, Ming and Fan, Zetao and Lao, Yunhong and Liu, Lifeng and Wang, Maojun and Wei, Jin}
}
