Split-p-GaN Gate HEMT With Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On

Citation:

Lao Y, Wei J, Wang M, Yu J, Fan Z, Yang J, Cui J, Li T, Yang H, Nuo M, et al. Split-p-GaN Gate HEMT With Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On. IEEE Electron Device Letters. 2025;46:628-631.