Citation:
Wu Y, Nuo M, Yang J, Lin W, Liu X, Yang X, Wang J, Hao Y, Shen B, Wang M, et al. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping. IEEE Transactions on Electron Devices. 2024;71:484-489.
