<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wu, Yanlin</style></author><author><style face="normal" font="default" size="100%">Nuo, Muqin</style></author><author><style face="normal" font="default" size="100%">Yang, Junjie</style></author><author><style face="normal" font="default" size="100%">Wei Lin</style></author><author><style face="normal" font="default" size="100%">Liu, Xiaosen</style></author><author><style face="normal" font="default" size="100%">Yang, Xuelin</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Active-passivation p-GaN gate high electron mobility transistor (AP-HEMT)</style></keyword><keyword><style  face="normal" font="default" size="100%">buffer trapping</style></keyword><keyword><style  face="normal" font="default" size="100%">Degradation</style></keyword><keyword><style  face="normal" font="default" size="100%">dynamic leakage</style></keyword><keyword><style  face="normal" font="default" size="100%">e-mode</style></keyword><keyword><style  face="normal" font="default" size="100%">Electron traps</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">hole injection</style></keyword><keyword><style  face="normal" font="default" size="100%">light emission</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">passivation</style></keyword><keyword><style  face="normal" font="default" size="100%">stress</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">71</style></volume><pages><style face="normal" font="default" size="100%">484-489</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>