@article {10367848,
	title = {Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping},
	journal = {IEEE Transactions on Electron Devices},
	volume = {71},
	number = {1},
	year = {2024},
	pages = {484-489},
	keywords = {Active-passivation p-GaN gate high electron mobility transistor (AP-HEMT), buffer trapping, Degradation, dynamic leakage, e-mode, Electron traps, HEMTs, hole injection, light emission, Logic gates, passivation, stress, Transistors},
	doi = {10.1109/TED.2023.3336302},
	author = {Wu, Yanlin and Nuo, Muqin and Yang, Junjie and Wei Lin and Liu, Xiaosen and Yang, Xuelin and Wang, Jinyan and Hao, Yilong and Shen, Bo and Wang, Maojun and Wei, Jin}
}
