Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range

Citation:

Fan Z, Wang M, Wei J, Song J, Zhang J, Shen B. Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range, in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD).; 2024:275-278.