@conference {10579598,
	title = {Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over -55 {\textdegree}C - 150 {\textdegree}C Operating Temperature Range},
	booktitle = {2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2024},
	pages = {275-278},
	keywords = {Bridge-leg circuit, double-pulse testing mode, false turn-on, hard switching, HEMTs, Logic gates, Power semiconductor devices, Schottky-type p-GaN high-electron mobility transistors (HEMTs), Temperature dependence, Temperature distribution, Threshold voltage, threshold voltage instability, Transistors},
	doi = {10.1109/ISPSD59661.2024.10579598},
	author = {Fan, Zetao and Wang, Maojun and Wei, Jin and Song, Jiaojiao and Zhang, Jiaxin and Shen, Bo}
}
