<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fan, Zetao</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Song, Jiaojiao</style></author><author><style face="normal" font="default" size="100%">Zhang, Jiaxin</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range</style></title><secondary-title><style face="normal" font="default" size="100%">2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Bridge-leg circuit</style></keyword><keyword><style  face="normal" font="default" size="100%">double-pulse testing mode</style></keyword><keyword><style  face="normal" font="default" size="100%">false turn-on</style></keyword><keyword><style  face="normal" font="default" size="100%">hard switching</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">Power semiconductor devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Schottky-type p-GaN high-electron mobility transistors (HEMTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature dependence</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature distribution</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">threshold voltage instability</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><pages><style face="normal" font="default" size="100%">275-278</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>