High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

Citation:

Yin R, Li Y, Wen CP, Fu Y, Hao Y, Wang M, Shen B. High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect, in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).; 2020:298-301.