@conference {9170190,
	title = {High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect},
	booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2020},
	pages = {298-301},
	keywords = {Edge termination, Fluorine, GaN vertical Schottky barrier diode, high breakdwon voltage, high energy fluorine ion implantation, High-voltage techniques, Ion implantation, Modulation, quasi-junction-barrier-Schottky diode, Schottky barriers, Schottky diodes, Space charge, space charge induced field modulation},
	doi = {10.1109/ISPSD46842.2020.9170190},
	author = {Yin, Ruiyuan and Li,Yue and Wen, Cheng P. and Fu, Yunyi and Hao, Yilong and Wang, Maojun and Shen, Bo}
}
