Wu Y, Perebeinos V, Lin Y-M, Low T, Xia F, Avouris P. Quantum Behavior of Graphene Transistors near the Scaling Limit. Nano Letters [Internet]. 2012;12:1417-1423. 访问链接

Wu Y, Farmer DB, Zhu W, Han S-J, Dimitrakopoulos CD, Bol AA, Avouris P, Lin Y-M. Three-Terminal Graphene Negative Differential Resistance Devices. Acs Nano [Internet]. 2012;6:2610-2616. 访问链接

Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, et al. State-of-the-Art Graphene High-Frequency Electronics. Nano Letters [Internet]. 2012;12:3062-3067. 访问链接

Steiner M, Engel M, Lin Y-M, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo J-WT, Green AA, et al. High-frequency performance of scaled carbon nanotube array field-effect transistors. Applied Physics Letters [Internet]. 2012;101. 访问链接

Liu G, Wu Y, Lin Y-M, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, et al. Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography. Acs Nano [Internet]. 2012;6:6786-6792. 访问链接

Wu Y, Lin Y-M, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature [Internet]. 2011;472:74-78. 访问链接

Xia F, Perebeinos V, Lin Y-M, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology [Internet]. 2011;6:179-184. 访问链接

Wrachien N, Cester A, Wu YQ, Ye PD, Zanoni E, Meneghesso G. Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric. Ieee Electron Device Letters [Internet]. 2011;32:488-490. 访问链接

Lin Y-M, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy, Charles R. J, Gaskill KD, Dimitrakopoulos C, Avouris P. Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology. Ieee Electron Device Letters [Internet]. 2011;32:1343-1345. 访问链接

Lin Y-M, Valdes-Garcia A, Han S-J, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, et al. Wafer-Scale Graphene Integrated Circuit. Science [Internet]. 2011;332:1294-1297. 访问链接

Gu JJ, Koybasi O, Wu YQ, Ye PD. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation. Applied Physics Letters [Internet]. 2011;99. 访问链接

Gu JJ, Wu YQ, Ye PD. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors. Journal of Applied Physics [Internet]. 2011;109. 访问链接

Wrachien N, Cester A, Zanoni E, Meneghesso G, Wu YQ, Ye PD, Ieee. Degradation of III-V inversion-type enhancement-mode MOSFETs. 2010 International Reliability Physics Symposium [Internet]. 2010:536-542. 访问链接

Lin Y-M, Dimitrakopoulos C, Farmer DB, Han S-J, Wu Y, Zhu W, Gaskill KD, Tedesco JL, Myers-Ward RL, Eddy, Charles R. J, et al. Multicarrier transport in epitaxial multilayer graphene. Applied Physics Letters [Internet]. 2010;97. 访问链接

Xu M, Wu YQ, Koybasi O, Shen T, Ye PD. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics. Applied Physics Letters [Internet]. 2009;94. 访问链接

Wu YQ, Wang WK, Koybasi O, Zakharov DN, Stach EA, Nakahara S, Hwang JCM, Ye PD. 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET. Ieee Electron Device Letters [Internet]. 2009;30:700-702. 访问链接

Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001). Applied Physics Letters [Internet]. 2009;95. 访问链接

Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics. Applied Physics Letters [Internet]. 2008;92. 访问链接

Xuan Y, Wu YQ, Ye PD. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm. Ieee Electron Device Letters [Internet]. 2008;29:294-296. 访问链接

Wu YQ, Xu M, Ye PD, Cheng Z, Li J, Park JS, Hydrick J, Bai J, Carroll M, Fiorenza JG, et al. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique. Applied Physics Letters [Internet]. 2008;93. 访问链接