科研成果 by Type: 期刊论文

2017

Song H, Li T, Zhang J, Zhou Y, Luo J, Chen C, Yang B, Ge C, Wu Y, Tang J. Highly Anisotropic Sb2Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure. Advanced Materials [Internet]. 2017;29. 访问链接

Li T, Zhang Z, Li X, Huang M, Li S, Li S, Wu Y. High field transport of high performance black phosphorus transistors. Applied Physics Letters [Internet]. 2017;110. 访问链接

Li X, Xiong X, Li T, Li S, Zhang Z, Wu Y. Effect of Dielectric Interface on the Performance of MoS2 Transistors. Acs Applied Materials & Interfaces [Internet]. 2017;9:44602-44608. 访问链接

Li X, Xiong X, Wu Y. Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices. Chinese Physics B [Internet]. 2017;26. 访问链接

Huang M, Li S, Zhang Z, Xiong X, Li X, Wu Y. Multifunctional high-performance van der Waals heterostructures. Nature Nanotechnology [Internet]. 2017;12:1148-+. 访问链接

Gao Q-G, Tian M-C, Li S-C, Li X-F, Wu Y-Q. Gigahertz frequency doubler based on millimeter-scale single-crystal graphene'. Acta Physica Sinica [Internet]. 2017;66. 访问链接

Gao Q, Li X, Tian M, Xiong X, Zhang Z, Wu Y. Short-Channel Graphene Mixer With High Linearity. Ieee Electron Device Letters [Internet]. 2017;38:1168-1171. 访问链接

2016

Luo W, Zemlyanov DY, Milligan CA, Du Y, Yang L, Wu Y, Ye PD. Surface chemistry of black phosphorus under a controlled oxidative environment. Nanotechnology [Internet]. 2016;27. 访问链接

Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale [Internet]. 2016;8:3572-3578. 访问链接

Li X, Gao T, Wu Y. Development of two-dimensional materials for electronic applications. Science China-Information Sciences [Internet]. 2016;59. 访问链接

Huang M, Wang M, Chen C, Ma Z, Li X, Han J, Wu Y. Broadband Black-Phosphorus Photodetectors with High Responsivity. Advanced Materials [Internet]. 2016;28:3481-+. 访问链接

2015

Zhu S, Fang J, Yao K, Wu Y. Nearly Perfect Spin Filter Based on a Wire of Half-Metallic (eta(5)-C5H5)Ti(eta(8)-C8H8)Ti Units. Physical Review Applied [Internet]. 2015;4. 访问链接

Li X, Lu X, Li T, Yang W, Fang J, Zhang G, Wu Y. Noise in Graphene Super lattices Grown on Hexagonal Boron Nitride. Acs Nano [Internet]. 2015;9:11382-11388. 访问链接

Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Performance Potential and Limit of MoS2 Transistors. Advanced Materials [Internet]. 2015;27:1547-+. 访问链接

Li S, Luo W, Gu J, Cheng X, Ye PD, Wu Y. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires. Nano Letters [Internet]. 2015;15:8026-8031. 访问链接

2014

Rakheja S, Wu Y, Wang H, Palacios T, Avouris P, Antoniadis DA. An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors. Ieee Transactions on Nanotechnology [Internet]. 2014;13:1005-1013. 访问链接

2013

Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X, Guinea F, Avouris P, Xia F. Damping pathways of mid-infrared plasmons in graphene nanostructures. Nature Photonics [Internet]. 2013;7:394-399. 访问链接

Wu Y, Farmer DB, Xia F, Avouris P. Graphene Electronics: Materials, Devices, and Circuits. Proceedings of the Ieee [Internet]. 2013;101:1620-1637. 访问链接

Hu Y, Li S, Jiao G, Wu YQ, Huang D, Ye PD, Li M-F. Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs. Ieee Transactions on Nanotechnology [Internet]. 2013;12:806-809. 访问链接

2012

Yan H, Li X, Chandra B, Tulevski G, Wu Y, Freitag M, Zhu W, Avouris P, Xia F. Tunable infrared plasmonic devices using graphene/insulator stacks. Nature Nanotechnology [Internet]. 2012;7:330-334. 访问链接

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成果类型

成果概览

已提交 (1)
2023 (2)
2022 (14)
2021 (6)
2020 (8)
2019 (12)
2018 (12)
2017 (8)
2016 (4)
2015 (4)

最新科研成果

已提交.

Hu QL, .. et al. WUY. True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO. Advanced Materials [Internet]. 2023;35(20):2210554. 访问链接

Shi X, Li X, Guo Q, Zeng M, Wang X, Wu Y. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews. 2023;10:011405.

Shi X, Wang X, Liu S, Guo Q, Sun L, Li X, HUANG R, Wu Y. High-Performance Bilayer WSe 2 pFET with Record I ds= 425 $μ$A/$μ$m and G m= 100 at $μ$S/$μ$m V ds=-1 V By Direct Growth and Fabrication on SiO 2 Substrate, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:7–1.

Fu T, Zeng M, Liu S, Liu H, HUANG R, Wu Y. Record-high 2P r= 60 $μ$C/cm 2 by Sub-5ns Switching Pulse in Ferroelectric Lanthanum-doped HfO 2 with Large Single Grain of Orthorhombic Phase> 38 nm, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:6–5.

Hu Q, Li Q, Zhu S, Gu C, Liu S, HUANG R, Wu Y. Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85° C at Zero V hold with Sub-10 ns Speed and 3-bit Operation, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:26–6.

Li Q, Gu C, Zhu S, Hu Q, Zhao W, Li X, HUANG R, Wu Y. {BEOL-Compatible High-Performance a-IGZO Transistors with Record high I ds, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:2–7.

Xiong X, Liu S, Liu H, Chen Y, Shi X, Wang X, Li X, HUANG R, Wu Y. Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration, in 2022 International Electron Devices Meeting (IEDM). IEEE; 2022:20–6.

Shi X, Li X, Guo Q, Gao H, Zeng M, Han Y, Yan S, Wu Y. Improved Self-Heating in Short-Channel Monolayer WS2 Transistors with High-Thermal Conductivity BeO Dielectrics. Nano Letters. 2022;22:7667–7673.

Li X, Zhang Z, Gao T, Shi X, Gu C, Wu Y. Van der Waals Epitaxial Trilayer MoS2 Crystals for High-Speed Electronics. Advanced Functional Materials. 2022;32:2208091.

Hu Q, Gu C, Zhu S, Li Q, Tong A, Kang J, HUANG R, Wu Y. Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency. IEEE Electron Device Letters. 2022;44:60–63.

Hu Q, Zhu S, Gu C, Wu Y. High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Applied Physics Letters. 2022;121:242101.

Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. Science Advances. 2022;8:eade4075.

Xiong X, Wang X, Hu Q, Li X, Wu Y. Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. Iscience. 2022;25:103947.

Cai P, Li H, Liu Z, Zhu T, Zeng M, JI Z, Wu Y, Padovani A, Larcher L, Pešić M, et al. Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors. IEEE Transactions on Electron Devices. 2022;69:2384–2390.

Cheng Z, Pang C-S, Wang P, Le ST, Wu Y, Shahrjerdi D, Radu I, Lemme MC, Peng L-M, Duan X, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022;5:416–423.

Xiong X, Kang J, Liu S, Tong A, Fu T, Li X, HUANG R, Wu Y. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide Transistors. Advanced Materials. 2022;34:2106321.

Xiong X, Tong A, Wang X, Liu S, Li X, HUANG R, Wu Y. Demonstration of Vertically-stacked CVD Monolayer Channels: MoS 2 Nanosheets GAA-FET with I on> 700 $μ$A/$μ$m and MoS2/WSe2 CFET, in 2021 IEEE International Electron Devices Meeting (IEDM). IEEE; 2021:7–5.

Gao T, Li X, Han L, Wu Y. Tunable synaptic devices based on ambipolar MoTe2 transistor, in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE; 2021:1–3.

Wang X, Shi X, Gu C, Guo Q, Liu H, Li X, Wu Y. High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2. APL Materials. 2021;9:071109.

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