Citation:Liu X, Wang M, Wei J, Wen CP, Xie B, Hao Y, Yang X, Shen B. GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion. IEEE Transactions on Electron Devices. 2023;70:1636-1640.ExportDOI BibTex EndNote Tagged EndNote XML DOI
