@article {10058994,
	title = {GaN-on-Si Quasi-Vertical p-n Diode With Junction Termination Extension Based on Hydrogen Plasma Treatment and Diffusion},
	journal = {IEEE Transactions on Electron Devices},
	volume = {70},
	number = {4},
	year = {2023},
	pages = {1636-1640},
	keywords = {annealing, Anodes, Breakdown voltage (BV), diffusion, Gallium nitride, gallium nitride (GaN), GaN-on-Si, Hydrogen, junction termination extension (JTE), Junctions, p-n diodes, plasmas, Schottky diodes},
	doi = {10.1109/TED.2023.3247366},
	author = {Liu, Xuan and Wang, Maojun and Wei, Jin and Wen, Cheng P. and Xie, Bing and Hao, Yilong and Yang, Xuelin and Shen, Bo}
}
