Citation:Xu Z, Wang J, Cai Y, Liu J, Yang Z, Li X, Wang M, Yang Z, Xie B, Yu M, et al. 300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. ELECTRONICS LETTERS. 2014;50:315-U161.ExportDOI BibTex EndNote Tagged EndNote XML SCI被引用次数：5. DOI
