@article { ISI:000331405200046,
	title = {300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio},
	journal = {ELECTRONICS LETTERS},
	volume = {50},
	number = {4},
	year = {2014},
	month = {FEB 13},
	pages = {315-U161},
	issn = {0013-5194},
	doi = {10.1049/el.2013.3928},
	author = {Xu, Zhe and Wang, Jinyan and Yong Cai and Liu, Jingqian and Zhen Yang and Li, Xiaoping and Wang, Maojun and Yang, Zhenchuang and Xie, Bin and Min Yu and Wu, Wengang and Ma, Xiaohua and Zhang, Jincheng and Hao, Yue}
}
