科研成果 by Type: Conference Paper

2023
Zhang Y, You Y, Ren W, Xu X, Shen L, Ru J, HUANG R, Ye L. 3.8 A 0.954nW 32kHz Crystal Oscillator in 22nm CMOS with Gm-C-Based Current Injection Control, in 2023 IEEE International Solid- State Circuits Conference (ISSCC).; 2023:68-70.
Jing Y, Wang Z, Shen L, Zhang Y, Chen P, Ru J, Ye L. An Information-Aware Adaptive Data Acquisition System using Level-Crossing ADC with Signal-Dependent Full Scale and Adaptive Resolution for IoT Applications, in 2023 IEEE International Symposium on Circuits and Systems (ISCAS).; 2023:1-4.
Gao J, Shen L, Li H, Ye S, Li J, Xu X, Cui J, Gao Y, HUANG R, Ye L. 23.1 A 7.9fJ/Conversion-Step and 37.12aFrms Pipelined-SAR Capacitance-to-Digital Converter with kT/C Noise Cancellation and Incomplete-Settling-Based Correlated Level Shifting, in 2023 IEEE International Solid- State Circuits Conference (ISSCC).; 2023:346-348.
Chen P, Wu M, Zhao W, Cui J, Wang Z, Zhang Y, Wang Q, Ru J, Shen L, Jia T, et al. 7.8 A 22nm Delta-Sigma Computing-In-Memory (Δ∑CIM) SRAM Macro with Near-Zero-Mean Outputs and LSB-First ADCs Achieving 21.38TOPS/W for 8b-MAC Edge AI Processing, in 2023 IEEE International Solid- State Circuits Conference (ISSCC).; 2023:140-142.
2022
Liu Y, Wang Z, He W, Shen L, Zhang Y, Chen P, Wu M, Zhang H, Zhou P, Liu J, et al. An 82nW 0.53pJ/SOP Clock-Free Spiking Neural Network with 40µs Latency for AloT Wake-Up Functions Using Ultimate-Event-Driven Bionic Architecture and Computing-in-Memory Technique, in 2022 IEEE International Solid- State Circuits Conference (ISSCC).Vol 65.; 2022:372-374.
Xu X, Ye S, Gao J, Zhang Y, Shen L, Ye L. A 32-ppm/°C 0.9-nW/kHz Relaxation Oscillator with Event-Driven Architecture and Charge Reuse Technique, in 2022 IEEE International Symposium on Circuits and Systems (ISCAS).; 2022:1973-1977.
Zhang Y, Xue C, Wang X, Liu T, Gao J, Chen P, Liu J, Sun L, Shen L, Ru J, et al. Single-Mode CMOS 6T-SRAM Macros With Keeper-Loading-Free Peripherals and Row-Separate Dynamic Body Bias Achieving 2.53fW/bit Leakage for AIoT Sensing Platforms, in 2022 IEEE International Solid- State Circuits Conference (ISSCC).Vol 65.; 2022:184-186.
Zhang H, Shen L, Zhang S, Li H, Zhang Y, Tan Z, HUANG R, Ye L. A 77μW 115dB-Dynamic-Range 586fA-Sensitivity Current-Domain Continuous-Time Zoom ADC with Pulse-Width-Modulated Resistor DAC and Background Offset Compensation Scheme, in 2022 IEEE Custom Integrated Circuits Conference (CICC).; 2022:1-2. 访问链接Abstract
High-precision large dynamic-range (DR) current-sensing front-ends are widely used in biomedical applications, such as patch-clamp, molecular concentration detection, and gene sequencing. The new gene sequencers require low-noise analog front-ends capable of sensing large DR current (>100 dB) down to sub-pA-level. At this level of precision, oversampled data converters are usually used. However, given the limited oversampling ratio in high throughput applications, it is very challenging to achieve a sub-pA-level sensitivity and >100dB DR within the limited area and energy budgets [1]. In [2], a 140dB DR is achieved using a multi-bit delta-sigma modulator (DSM), but the power consumption is over 1mW and the current sensitivity is limited to 6.3pA. An hourglass ADC achieving a 100fA sensitivity and 140dB DR is presented in [3], but is limited by conversion rate and relatively high power consumption (295μW). For a 100Hz bandwidth, its noise floor increases to 18pA.
2021
\textbfShen \textbfL, Gao Z, Yang X, Shi W, Sun N. [2021.ISSCC].27.7 A 79dB-SNDR 167dB-FoM Bandpass ΔΣ ADC Combining N-Path Filter with Noise-Shaping SAR, in 2021 IEEE International Solid- State Circuits Conference (ISSCC).Vol 64.; 2021:382-384.
Shi W, Liu J, Mukherjee A, Yang X, TANG X, Shen L, Zhao W, Sun N. 10.4 A 3.7mW 12.5MHz 81dB-SNDR 4th-Order CTDSM with Single-OTA and 2nd-Order NS-SAR, in 2021 IEEE International Solid- State Circuits Conference (ISSCC).Vol 64.; 2021:170-172.
2020
Wang H, Wang K, Yang J, Shen L, Sun N, Lee H-S, Han S. GCN-RL Circuit Designer: Transferable Transistor Sizing with Graph Neural Networks and Reinforcement Learning, in 2020 57th ACM/IEEE Design Automation Conference (DAC).; 2020:1-6.Abstract
Automatic transistor sizing is a challenging problem in circuit design due to the large design space, complex performance tradeoffs, and fast technology advancements. Although there have been plenty of work on transistor sizing targeting on one circuit, limited research has been done on transferring the knowledge from one circuit to another to reduce the re-design overhead. In this paper, we present GCN-RL Circuit Designer, leveraging reinforcement learning (RL) to transfer the knowledge between different technology nodes and topologies. Moreover, inspired by the simple fact that circuit is a graph, we learn on the circuit topology representation with graph convolutional neural networks (GCN). The GCN-RL agent extracts features of the topology graph whose vertices are transistors, edges are wires. Our learning-based optimization consistently achieves the highest Figures of Merit (FoM) on four different circuits compared with conventional black box optimization methods (Bayesian Optimization, Evolutionary Algorithms), random search and human expert designs. Experiments on transfer learning between five technology nodes and two circuit topologies demonstrate that RL with transfer learning can achieve much higher FoMs than methods without knowledge transfer. Our transferable optimization method makes transistor sizing and design porting more effective and efficient.
Liu J, TANG X, Zhao W, Shen L, Sun N. 16.5 A 13b 0.005mm2 40MS/s SAR ADC with kT/C Noise Cancellation, in 2020 IEEE International Solid- State Circuits Conference - (ISSCC).; 2020:258-260.
TANG X, Yang X, Zhao W, Hsu C-K, Liu J, Shen L, Mukherjee A, Shi W, Pan DZ, Sun N. 9.5 A 13.5b-ENOB Second-Order Noise-Shaping SAR with PVT-Robust Closed-Loop Dynamic Amplifier, in 2020 IEEE International Solid- State Circuits Conference - (ISSCC).; 2020:162-164.
2019
Xu B, Lin Y, TANG X, Li S, Shen L, Sun N, Pan DZ. WellGAN: Generative-Adversarial-Network-Guided Well Generation for Analog/Mixed-Signal Circuit Layout, in 2019 56th ACM/IEEE Design Automation Conference (DAC).; 2019:1-6.Abstract
In back-end analog/mixed-signal (AMS) design flow, well generation persists as a fundamental challenge for layout compactness, routing complexity, circuit performance and robustness. The immaturity of AMS layout automation tools comes to a large extent from the difficulty in comprehending and incorporating designer expertise. To mimic the behavior of experienced designers in well generation, we propose a generative adversarial network (GAN) guided well generation framework with a post-refinement stage leveraging the previous high-quality manually-crafted layouts. Guiding regions for wells are first created by a trained GAN model, after which the well generation results are legalized through post-refinement to satisfy design rules. Experimental results show that the proposed technique is able to generate wells close to manual designs with comparable post-layout circuit performance.
Shen L, Mukherjee A, Li S, TANG X, Lu N, Sun N. A 0.6-V Tail-Less Inverter Stacking Amplifier with 0.96 PEF, in 2019 Symposium on VLSI Circuits.; 2019:C144-C145.
TANG X, Li S, Shen L, Zhao W, Yang X, Williams R, Liu J, Tan Z, Hall N, Sun N. 18.2 A 16fJ/Conversion-Step Time-Domain Two-Step Capacitance-to-Digital Converter, in 2019 IEEE International Solid- State Circuits Conference - (ISSCC).; 2019:296-297.
Shen L, Shen Y, TANG X, Hsu C-K, Shi W, Li S, Zhao W, Mukherjee A, Sun N. 3.4 A 0.01mm2 25µW 2MS/s 74dB-SNDR Continuous-Time Pipelined-SAR ADC with 120fF Input Capacitor, in 2019 IEEE International Solid- State Circuits Conference - (ISSCC).; 2019:64-66.
2017
Shen L, Lu N, Sun N. A 1V 0.25uW inverter-stacking amplifier with 1.07 noise efficiency factor, in 2017 Symposium on VLSI Circuits.; 2017:C140-C141.Abstract
This paper presents a highly power efficient amplifier. By stacking inverters and splitting the capacitor feedback network, the proposed amplifier achieves 6-time current reuse, thereby significantly boosting gm and lowering noise but without increasing power. A novel biasing scheme is devised to ensure robust operation under 1V supply. A prototype in 180nm CMOS has 5.5uV rms noise within 10kHz BW while consuming only 0.25uW, leading to a noise efficiency factor (NEF) of 1.07, which is the best among reported amplifiers.