摘要:

This paper presents a 60 GHz phase shifter, based on a coplanar waveguide (CPW) transmission line, loaded with ferroelectric hafnium zirconium oxide (HZO) variable metal-insulator-metal (MIM) varactors, developed for the back-end-of-line (BEoL) on-chip integration. Using the measured data of capacitance-voltage (C-V) characteristics of HZO and implementing the method-of-moments simulation, it was shown, that by changing the bias voltage between 0.95 and -3 V, the device shows a phase shift of 111° and a minimum insertion loss of -5.84 dB at 60 GHz. The chip area of the device is 0.206 mm 2 , making it the smallest among non-CMOS phase shifters.

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