<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sukhrob Abdulazhanov</style></author><author><style face="normal" font="default" size="100%">Quang Huy Le</style></author><author><style face="normal" font="default" size="100%">Dang Khoa Huynh</style></author><author><style face="normal" font="default" size="100%">Defu Wang</style></author><author><style face="normal" font="default" size="100%">Gerald Gerlach</style></author><author><style face="normal" font="default" size="100%">Thomas Kämpf</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A mmWave Phase Shifter Based on Ferroelectric Hafnium Zirconium Oxide Varactors</style></title><secondary-title><style face="normal" font="default" size="100%">2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/8880144</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Bochum, Germany</style></pub-location><pages><style face="normal" font="default" size="100%">175-177</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a 60 GHz phase shifter, based on a coplanar waveguide (CPW) transmission line, loaded with ferroelectric hafnium zirconium oxide (HZO) variable metal-insulator-metal (MIM) varactors, developed for the back-end-of-line (BEoL) on-chip integration. Using the measured data of capacitance-voltage (C-V) characteristics of HZO and implementing the method-of-moments simulation, it was shown, that by changing the bias voltage between 0.95 and -3 V, the device shows a phase shift of 111° and a minimum insertion loss of -5.84 dB at 60 GHz. The chip area of the device is 0.206 mm&amp;nbsp;2&amp;nbsp;, making it the smallest among non-CMOS phase shifters.</style></abstract></record></records></xml>