A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.

In this article, we present the capacitance–voltage ( C – V ) characteristics of Hfx Zr1−x O2 metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was analyzed and an optimized bias region for the maximum tunability was defined. Additional focus was made on an antiferroelectric-like (AFE) behavior, which occurs for > 50% Zr doping. The presence of both the ferroelectric and the AFE phase manifests itself in specific C – V behavior, where a reduced bias range is required for tuning, however, at the cost of a smaller tunability. The suitability of this behavior for varactor applications is also discussed.

The following study employs RF waveform engineering to monitor degradation in 22nm FDSOI transistor at high-frequency region. The current and voltage waveforms are measured, reconstructed, and de-embedded to the device’s intrinsic during large-signal CW RF stress testing. This technique provides extra information on device performance compared with standard DC and RF figures of Merits degradation. With clear pictures of where on the output IV plane the degradation is occurring, device designers can get an insight into the degradation behavior limiting RF performance. It is observed that devices show a different behavior under RF stress in comparison to DC-stress-induced degradation.

This paper presents a highly linear 79 GHz differential low-noise amplifier (LNA) for civil-automotive radars operating at the predefined frequency range from 77 GHz to 81 GHz. The circuit is optimized for frequency-modulated continuous-wave (FMCW) radar application, which typically require a very high input-referred 1 dB-compression point (iP 1dB ). A reconfigurable differential common-source stage with capacitive neutralization is employed together with a common-gate stage in cascode configuration as the core of the LNA. The performance of the circuit can be easily adjusted within the gain-NF-P 1dB trade-off boundaries by changing the voltage at the back-gate terminal of the common-source stage, thus tailored to the application specific requirements. Passive baluns are placed at input and output to characterize the differential circuit with the available single-ended laboratory instrumentation. The LNA is implemented in a 22 nm FD-SOI CMOS technology. Its core is very compact with an area of 0.04 mm 2 . The fabricated chip is experimentally characterized in the lab, and it shows a peak gain of 8.7 dB at 80 GHz. From 75 GHz to 85 GHz, the measured input referred P 1dB (iP 1dB ) is about -6 dBm, and the minimum noise figure (NF) is 5 dB. Compared with the state-of-the-art for LNAs operating in a similar frequency range, the presented circuit shows the highest iP 1dB and has the most compact circuit core, together with an excellent NF and a moderate gain, resulting in the best figure-of-merit.