III–V compound semiconductors, such as InGaAs/InAlAs, exhibit exceptional carrier transport properties, establishing them as fundamental elements in terahertz (THz) applications crucial for the development of 6G networks. These materials present the potential for high-performance, energy-efficient THz devices. Furthermore, their compatibility with heterojunction integration, particularly in hetero-integration with silicon-germanium (SiGe) bipolar complementary metal–oxide–semiconductor (BiCMOS), paves the way for cutting-edge THz devices. This advantage highlights the crucial role of III–V semiconductors in driving THz and 6G technology, meeting the evolving demands of future wireless communication and sensing systems. NSR conducted an interview with Dr. Dae-Hyun Kim, a semiconductor expert with a distinguished academic and professional background. Dr. Kim embarked on his career at Teledyne Scientific Company in 2008, later joining SEMATECH in 2012, where he played a crucial role in propelling semiconductor technology forward. In 2015, he assumed the position of an Associate Professor at Kyungpook National University. Dr. Kim's journey embodies his long commitment to the field, underscored by his remarkable contributions. In this interview, Dr. Kim shared his insights on fostering collaboration within the semiconductor field. He particularly emphasized on effective approaches for advancing research and innovation in semiconductor technology.

In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) metal–ferroelectric–metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS technology as a shunting capacitor for the coplanar waveguide (CPW) transmission line. At low frequencies, the varactor shows a slight imprint behavior, with a maximum tunability of 15% after the wake-up. In the radio- and mmWave frequency range, the varactor’s maximum tunability decreases slightly from 13% at 30 MHz to 10% at 110 GHz. Ferroelectric varactors were known for their frequency-independent, linear tunability as well as low loss. However, this potential was never fully realized due to limitations in integration. Here, we show that ferroelectric HfO2 thin films with good back-end-of-line compatibility support very large scale integration. This opens up a broad range of possible applications in the mmWave and THz frequency range such as 6G communications, imaging radar, or THz imaging.

Dielectric spectroscopy in the sub-THz regime is a promising candidate for microfluidic-based analysis of biological cells and bio-molecules, since multiple vibrational and rotational transition energy levels exist in this frequency range (P. Siegel, “Terahertz technology in biology and medicine,” IEEE Trans. Microw. Theor. Tech., vol. 52, pp. 2438–2447, 2004). This article presents our recent efforts in the implementation of microfluidic channel networks with silicon-based technologies to unleash the potential of an integrated sub-THz microfluidic sensor platform. Various aspects of dielectric sensors, readout systems, flowmeter design as well as implemention- and technology-related questions are addressed. Three dielectric sensor systems are presented operating at 240 GHz realizing transmission-based, reflection-based and full two-port architectures. Furthermore different silicon based microchannel integration techniques are discussed as well as a novel copper pillar-based PCB microchannel method is proposed and successfully demonstrated.

A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.

In this article, we present the capacitance–voltage ( C – V ) characteristics of Hfx Zr1−x O2 metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of doping, electric field cycling, and annealing temperature on tuning characteristics (tunability) was analyzed and an optimized bias region for the maximum tunability was defined. Additional focus was made on an antiferroelectric-like (AFE) behavior, which occurs for > 50% Zr doping. The presence of both the ferroelectric and the AFE phase manifests itself in specific C – V behavior, where a reduced bias range is required for tuning, however, at the cost of a smaller tunability. The suitability of this behavior for varactor applications is also discussed.

A 480-GHz sensor consists of signal stimulus and the transducer element as well as a subharmonic mixer in a 130-nm SiGe BiCMOS technology is reported. It features a mixer-first architecture based on down-conversion subharmonic mixer, an local oscillator (LO) chain at 240-GHz using a frequency doubler with variable-gain characterization, and a 480-GHz RF chain, making the fully integrated 480-GHz receiver possible. In a frequency range of 210–270 GHz at a maximum of 1.5-V supply offset, the LO chain has a 14-dB power-level variation, comprising with a 120-GHz frequency quadrupler, a power amplifier, and a variable frequency doubler. The proposed subharmonic receiver is driven by the RF and LO chain with a multiplier factor of 16 and 8, respectively. In this way, 480-GHz signal is generated, fed through the transducer, and hetero-mixed at subharmonic mixer. The measured output power difference is adjustable over 8 dB. Along with the intermediate frequency (IF) bandwidth of 20 GHz, the wide RF bandwidth makes it suitable for submillimetre-wave receiver-based dielectric spectroscopy applications. The chip occupies an area of 2.2 mm 2 and consumes 290 mW.

This article presents a reflectometer-based on-chip dielectric sensor with integrated transducers at 240 GHz. The chip simplifies the measurement of a vector network analyzer (VNA) to sense the incident and reflected waves by using two heterodyne mixer-based receivers with a dielectric sensing element. Radio frequency (RF) and local oscillator (LO) submillimeter waves are generated by two frequency multiplier chains, respectively. Two back-to-back identical differential side-coupled directive couplers are proposed to separate the incident and reflected signals and couple them to mixers. Both transmission line and coplanar stripline transducers are proposed and integrated with reflectometer to investigate the sensitivity of dielectric sensors. The latter leads to a larger power variation of the reflectometer by providing more sufficient operating bands for the magnitude and phase slope of S11 . The readout of the transducers upon exposure to liquids is performed by the measurement of their reflected signals using two external excitation sources. The experimental dielectric sensing is demonstrated by using binary methanol–ethanol mixture placed on the proposed on-chip dielectric sensor in the assembled printed circuit board. It enables a maximum 8 dB of the power difference between the incident and reflected channels on the measurement of liquid solvents. Both chips occupy an area of 4.03 mm 2 and consume 560 mW. Along with a wide operational frequency range from 200 to 240 GHz, this simplified one-port-VNA-based on-chip device makes it feasible for the use of handle product and suitable for the submillimeter-wave dielectric spectroscopy applications.

This article presents a fully differential power-tuning heterodyne on-chip sensing readout system at 240 GHz. The chip enables the measurement of not only the transmission parameter but also the reflection parameter to sense the permittivity of different materials by using four heterodyne mixer-based receiving channels connected to a dielectric sensing element. To facilitate the operation and characterization, three frequency multiplier chains are included to generate the required two identical radio frequency (RF) and one local oscillator (LO) subterahertz signals. RF frequency multiplier chain is configured to enable a tunable power level of the RF signal by using a variable attenuator. A chip prototype using 130-nm silicon–germanium (SiGe) BiCMOS is implemented with a size of 11 mm 2 and dc power consumption of 2.7 W. The measured 10-dB bandwidth of 20.8% is achieved in a frequency range from 207 to 257 GHz with 14-dB measured power-tuning range. The transmission and reflection parameters’ measurements for copper and gummi show a differentiated value in terms of magnitude and phase, which demonstrates the sensing function of the proposed readout system.

This paper presents a high-integration miniaturized dielectric spectroscopy system for sensing the change of permittivity at 240 GHz in the SiGe BiCMOS technology. The sensor features a transducer with a resonator to perform bandpass frequency response, whose complex value of S21 is varied with the permittivity of the sample under test. This variation can be detected and recorded as the change of amplitude and phase of the 240-GHz in-phase and quadrature direct conversion mixer. An external 30-GHz source is employed with cascade frequency multiplier chain to deliver a signal through the system with a wide tuning range of 215–245 GHz. An additional probe is employed to carry the sample and implement chip measurements on the probe station. The sensing function of this system is performed with the leaded wire as a metallic sample to be placed on the top of the transducer. Based on the measured dc output voltage changes, the calculated magnitude and phase of IQ signal in the 215–245-GHz range are used to estimate the complex permittivity change of MUTs. This dielectric spectroscopy system is also suitable for sensing the complexy permittivity change at higher frequencies in the future terahertz Lab-on-Chip measurements.

This paper presents two D-band frequency quadruplers (FQs) employing different circuit techniques. First FQ is a 129–171-GHz stacked Gilbert-cell multiplier using a bootstrapping technique, which improves the bandwidth and the conversion gain with respect to the conventional topology. Stacked architecture enables current reuse for the second frequency doubler resulting in a compact and energy-efficient design. The circuit reaches 3-dB bandwidth of 42 GHz, which is the highest among similar reported quadruplers. It achieves 2.2-dBm saturated output power, 5-dB peak conversion gain, and 1.7% peak DC-to-RF efficiency. The stacked FQ occupies 0.08 mm2 and consumes 22.7 mA from 4.4-V supply. Second presented circuit is a transformer-based injection-locked FQ (T-ILFQ) employing an E-band push–push voltage-controlled oscillator (PP-VCO). The VCO is a self-buffered common-collector Colpitts oscillator with a transformer formed on emitter inductors. Proposed configuration does not reduce the tuning range of the VCO, thus providing wide locking range and high sensitivity with respect to the injected signal. The T-ILFQ achieves 21.1% locking range, which is the highest among other reported injection-locked frequency multipliers. The peak output power is −4 dBm and the input sensitivity reaches −22 dBm. The circuit occupies 0.09 mm2 and consumes 14.8 mA from 3.3-V supply.

A balanced RF rectifier is proposed to replace terminations in microwave circuits and thus to recycle the otherwise dissipated power in resistances. In order not to degrade the performance of the original circuits, a balanced configuration is adopted because it minimizes the variation of input impedance of the rectification circuitry. This approach achieves good input reflection coefficient over a large dynamic range and operating frequencies. The highly efficient energy recycler is composed of a 3 dB quadrature coupler and two identical RF rectifiers. The impact of amplitude and phase imbalances of the transfer characteristics of the coupler is discussed. Furthermore, an arbitrary-port-resistance coupler is studied to replace non-50- Ω terminations. The experimental verification demonstrates that the proposed circuit provides an input reflection coefficient of better than −15 dB from 2.2 to 2.5GHz over different input power levels. The measured peak RF-to-dc efficiency is 74.9% at 2.34 GHz with S11=−24dB . The proposed balanced rectifier thus significantly improves S11 over existing rectifiers and is therefore suitable for replacing resistive terminations in a large variety of circuits.