@proceedings {37391,
	title = {A mmWave Phase Shifter Based on Ferroelectric Hafnium Zirconium Oxide Varactors},
	journal = {2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)},
	year = {2019},
	pages = {175-177},
	publisher = {IEEE},
	address = {Bochum, Germany},
	abstract = {This paper presents a 60 GHz phase shifter, based on a coplanar waveguide (CPW) transmission line, loaded with ferroelectric hafnium zirconium oxide (HZO) variable metal-insulator-metal (MIM) varactors, developed for the back-end-of-line (BEoL) on-chip integration. Using the measured data of capacitance-voltage (C-V) characteristics of HZO and implementing the method-of-moments simulation, it was shown, that by changing the bias voltage between 0.95 and -3 V, the device shows a phase shift of 111{\textdegree} and a minimum insertion loss of -5.84 dB at 60 GHz. The chip area of the device is 0.206 mm\&nbsp;2\&nbsp;, making it the smallest among non-CMOS phase shifters.},
	url = {https://ieeexplore.ieee.org/abstract/document/8880144},
	author = {Sukhrob Abdulazhanov and Quang Huy Le and Dang Khoa Huynh and Defu Wang and Gerald Gerlach and Thomas K{\"a}mpf}
}
