GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

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Wu YQ, Ye PD, Wilk GD, Yang B. GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric. Materials Science and Engineering B-Solid State Materials for Advanced Technology [Internet]. 2006;135:282-284.

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